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2SK3151
Silicon N Channel MOS FET High Speed Power Switching
REJ03G1076-0400 (Previous: ADE-208-747B) Rev.4.00 Sep 07, 2005
Features
* Low on-resistance RDS (on) = 11.5 m typ. * High speed switching * 4 V gate drive device can be driven from 5 V source
Outline
RENESAS Package code: PRSS0004ZE-A (Package name: TO-3P)
D G 1. Gate 2. Drain (Flange) 3. Source
1
2
S 3
Rev.4.00 Sep 07, 2005 page 1 of 7
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2SK3151
Absolute Maximum Ratings
(Ta = 25C)
Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel temperature Storage temperature Notes: 1. PW 10 s, duty cycle 1 % 2. Value at Tc = 25C 3. Value at Tch = 25C, Rg 50 Symbol VDSS VGSS ID ID(pulse)Note1 IDR IAP Note3 EAR Note3 Pch Note2 Tch Tstg Ratings 100 20 50 200 50 50 250 125 150 -55 to +150 Unit V V A A A A mJ W
C C
Electrical Characteristics
(Ta = 25C)
Item Drain to source breakdown voltage Gate to source breakdown voltage Gate to source leak current Zero gate voltage drain current Gate to source cutoff voltage Static drain to source on state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Body-drain diode forward voltage Body-drain diode reverse recovery time Note: 4. Pulse test Symbol V(BR)DSS V(BR)GSS IGSS IDSS VGS(off) RDS(on) RDS(on) |yfs| Ciss Coss Crss td(on) tr td(off) tf VDF trr Min 100 20 -- -- 1.0 -- -- 30 -- -- -- -- -- -- -- -- -- Typ -- -- -- -- -- 11.5 16 50 4000 1650 590 30 280 830 450 0.95 100 Max -- -- 10 10 2.5 15 25 -- -- -- -- -- -- -- -- -- -- Unit V V A A V m m S pF pF pF ns ns ns ns V V Test Conditions ID = 10 mA, VGS = 0 IG = 100 A, VDS = 0 VGS = 16 V, VDS = 0 VDS = 100 V, VGS = 0 ID = 1 mA, VDS = 10 V ID = 25 A, VGS = 10 VNote4 ID = 25 A, VGS = 4 V Note4 ID = 25 A, VDS = 10 V Note4 VDS = 10 V, VGS = 0, f = 1 MHz ID = 25 A, VGS = 10 V, RL = 1.2
IF = 50 A, VGS = 0 IF = 50 A, VGS = 0 diF/ dt = 50 A/ s
Rev.4.00 Sep 07, 2005 page 2 of 7
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2SK3151
Main Characteristics
Power vs. Temperature Derating
160 1000 300 100 30 10 3 1 50 100 150 200 1
DC
PW
Maximum Safe Operation Area
Channel Dissipation Pch (W)
Drain Current ID (A)
120
10
10
0
s
1
= 10 m
m
s(
s
s
sh
80
Op
er
at
40
Operation in this area is limited by RDS(on) Ta = 25C 2 5 10
ion
1
(T
c=
ot
)
25
C )
0
20
50 100 200
Case Temperature TC (C)
Drain to Source Voltage VDS (V)
Typical Output Characteristics
50
VGS = 10 V
Typical Transfer Characteristics
100
Pulse Test
Drain Current ID (A)
3V 30 3.5 V
Drain Current ID (A)
40
4V
80
VDS = 10 V Pulse Test
60
20 2.5 V 10 2V 0 2 4 6 8 10
40
75C
Tc = -25C
20 25C 0 1 2 3 4 5
Drain to Source Voltage VDS (V) Drain to Source Saturation Voltage vs. Gate to Source Voltage
Drain to Source Saturation Voltage VDS (on) (V)
1.0 Pulse Test
Gate to Source Voltage VGS (V) Static Drain to Source on State Resistance vs. Drain Current
100 Pulse Test 50
VGS = 4 V
0.8 ID = 50 A
Static Drain to Source on State Resistance RDS (on) (m)
0.6
20 10
0.4 20 A 0.2 10 A
10 V 5 2 1 1 2 5 10 20 50 100 200
0 0
4
8
12
16
20
Gate to Source Voltage VGS (V)
Drain Current ID (A)
Rev.4.00 Sep 07, 2005 page 3 of 7
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2SK3151
Static Drain to Source on State Resistance vs. Temperature
Forward Transfer Admittance yfs (S)
50 Pulse Test 40 10,20 A 30 ID = 50 A 50 A 20 4V 10, 20 A 10 0 -50
VGS = 10 V
Static Drain to Source on State Resistance RDS (on) (m)
Forward Transfer Admittance vs. Drain Current
500 200 100 50 20 10 5 2 1 0.5 0.1 0.3 1 3 10 30 100 75C Tc = -25C 25C
VDS = 10 V Pulse Test
0
50
100
150
200
Case Temperature TC (C) Body to Drain Diode Reverse Recovery Time
1000 30000
Drain Current ID (A) Typical Capacitance vs. Drain to Source Voltage
VGS = 0 f = 1 MHz
Reverse Recovery Time trr (ns)
500
Capacitance C (pF)
10000 Ciss 3000 1000
200 100 50 20 10 0.1 di / dt = 50 A / s VGS = 0, Ta = 25C 0.3 1 3 10 30 100
Coss Crss
300 100 0
10
20
30
40
50
Reverse Drain Current IDR (A)
Drain to Source Voltage VDS (V)
Dynamic Input Characteristics
Drain to Source Voltage VDS (V)
ID = 50 A
VDD = 100 V 50 V 25 V VDS VGS
Switching Characteristics
Gate to Source Voltage VGS (V)
20 5000
td(off) tf tr
200
160
16
Switching Time t (ns)
1000 500 200 100 50 20 10 0.1 0.2
120
12
80
8
40
VDD = 100 V 50 V 25 V
4 0 400
td(on) VGS = 10 V, VDD = 30 V PW = 5 s, duty < 1 %
0
80
160
240
320
0.5 1
2
5 10 20
50
Gate Charge Qg (nc)
Drain Current ID (A)
Rev.4.00 Sep 07, 2005 page 4 of 7
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2SK3151
Reverse Drain Current vs. Source to Drain Voltage Maximum Avalanche Energy vs. Channel Temperature Derating
Repetitive Avalanche Energy EAR (mJ)
(A)
50 10 V 40
250
IAP = 50 A VDD = 50 V duty < 0.1 % Rg > 50
Reverse Drain Current IDR
200
30
VGS = 0, -5 V
150
20
5V
100
10 Pulse Test 0 0.4 0.8 1.2 1.6 2.0
50 0 25
50
75
100
125
150
Source to Drain Voltage
VSDF (V)
Channel Temperature Tch (C)
Normalized Transient Thermal Impedance vs. Pulse Width
Normalized Transient Thermal Impedance s (t)
3 Tc = 25C 1 D=1 0.5 0.3
0.2
0.1
0.1
0.05
ch - c(t) = s (t) * ch - c ch - c = 1.0C/W, Tc = 25C
PDM PW T
0.03
0.02 1 lse 0.0 t pu o h 1s
D=
PW T
0.01 10
100
1m
10 m
100 m
1
10
Pulse Width Avalanche Test Circuit
VDS Monitor L IAP Monitor
PW (S) Avalanche Waveform
EAR = 1 2 * L * IAP2 * VDSS VDSS - VDD V(BR)DSS IAP
Rg
D. U. T
VDD
VDS
ID
Vin 15 V 50 0 VDD
Rev.4.00 Sep 07, 2005 page 5 of 7
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2SK3151
Switching Time Test Circuit
Vin Monitor D.U.T. RL Vin Vin 10 V 50 VDD = 30 V Vout 10% 10% 10% Vout Monitor
Switching Time Waveforms
90%
90% td(on) tr
90% td(off) tf
Rev.4.00 Sep 07, 2005 page 6 of 7
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2SK3151
Package Dimensions
JEITA Package Code
SC-65
RENESAS Code
PRSS0004ZE-A
Package Name TO-3P / TO-3PV
MASS[Typ.] 5.0g
5.0 0.3
Unit: mm
4.8 0.2 1.5
15.6 0.3
0.5
1.0
3.2 0.2
14.9 0.2
19.9 0.2
1.6 1.4 Max 2.0 2.8
2.0
1.0 0.2 3.6 0.9 1.0
18.0 0.5
0.6 0.2
5.45 0.5
5.45 0.5
Ordering Information
Part Name 2SK3151-E Quantity 30 pcs Plastic magazine Shipping Container
Note: For some grades, production may be terminated. Please contact the Renesas sales office to check the state of production before ordering the product.
Rev.4.00 Sep 07, 2005 page 7 of 7
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0.3
Sales Strategic Planning Div.
Keep safety first in your circuit designs!
Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan
1. Renesas Technology Corp. puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of nonflammable material or (iii) prevention against any malfunction or mishap. Notes regarding these materials 1. These materials are intended as a reference to assist our customers in the selection of the Renesas Technology Corp. product best suited to the customer's application; they do not convey any license under any intellectual property rights, or any other rights, belonging to Renesas Technology Corp. or a third party. 2. Renesas Technology Corp. assumes no responsibility for any damage, or infringement of any third-party's rights, originating in the use of any product data, diagrams, charts, programs, algorithms, or circuit application examples contained in these materials. 3. All information contained in these materials, including product data, diagrams, charts, programs and algorithms represents information on products at the time of publication of these materials, and are subject to change by Renesas Technology Corp. without notice due to product improvements or other reasons. It is therefore recommended that customers contact Renesas Technology Corp. or an authorized Renesas Technology Corp. product distributor for the latest product information before purchasing a product listed herein. The information described here may contain technical inaccuracies or typographical errors. Renesas Technology Corp. assumes no responsibility for any damage, liability, or other loss rising from these inaccuracies or errors. Please also pay attention to information published by Renesas Technology Corp. by various means, including the Renesas Technology Corp. Semiconductor home page (http://www.renesas.com). 4. When using any or all of the information contained in these materials, including product data, diagrams, charts, programs, and algorithms, please be sure to evaluate all information as a total system before making a final decision on the applicability of the information and products. Renesas Technology Corp. assumes no responsibility for any damage, liability or other loss resulting from the information contained herein. 5. Renesas Technology Corp. semiconductors are not designed or manufactured for use in a device or system that is used under circumstances in which human life is potentially at stake. Please contact Renesas Technology Corp. or an authorized Renesas Technology Corp. product distributor when considering the use of a product contained herein for any specific purposes, such as apparatus or systems for transportation, vehicular, medical, aerospace, nuclear, or undersea repeater use. 6. The prior written approval of Renesas Technology Corp. is necessary to reprint or reproduce in whole or in part these materials. 7. If these products or technologies are subject to the Japanese export control restrictions, they must be exported under a license from the Japanese government and cannot be imported into a country other than the approved destination. Any diversion or reexport contrary to the export control laws and regulations of Japan and/or the country of destination is prohibited. 8. Please contact Renesas Technology Corp. for further details on these materials or the products contained therein.
RENESAS SALES OFFICES
Refer to "http://www.renesas.com/en/network" for the latest and detailed information. Renesas Technology America, Inc. 450 Holger Way, San Jose, CA 95134-1368, U.S.A Tel: <1> (408) 382-7500, Fax: <1> (408) 382-7501 Renesas Technology Europe Limited Dukes Meadow, Millboard Road, Bourne End, Buckinghamshire, SL8 5FH, U.K. Tel: <44> (1628) 585-100, Fax: <44> (1628) 585-900 Renesas Technology Hong Kong Ltd. 7th Floor, North Tower, World Finance Centre, Harbour City, 1 Canton Road, Tsimshatsui, Kowloon, Hong Kong Tel: <852> 2265-6688, Fax: <852> 2730-6071 Renesas Technology Taiwan Co., Ltd. 10th Floor, No.99, Fushing North Road, Taipei, Taiwan Tel: <886> (2) 2715-2888, Fax: <886> (2) 2713-2999 Renesas Technology (Shanghai) Co., Ltd. Unit2607 Ruijing Building, No.205 Maoming Road (S), Shanghai 200020, China Tel: <86> (21) 6472-1001, Fax: <86> (21) 6415-2952 Renesas Technology Singapore Pte. Ltd. 1 Harbour Front Avenue, #06-10, Keppel Bay Tower, Singapore 098632 Tel: <65> 6213-0200, Fax: <65> 6278-8001 Renesas Technology Korea Co., Ltd. Kukje Center Bldg. 18th Fl., 191, 2-ka, Hangang-ro, Yongsan-ku, Seoul 140-702, Korea Tel: <82> 2-796-3115, Fax: <82> 2-796-2145
http://www.renesas.com
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(c) 2005. Renesas Technology Corp., All rights reserved. Printed in Japan.
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